IRF7329PBFInfineon
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    • Manufacturer No：
      IRF7329PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7329PBF
    • SKU：
      2691544
    • Description：
      MOSFET 2P-CH 12V 9.2A 8-SOIC

    User Guide

    User Guide

    IRF7329PBF Details

    MOSFET 2P-CH 12V 9.2A 8-SOIC

    IRF7329PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Drain to Source Voltage (Vdss): 12V
    • Factory Lead Time: 13 Weeks
    • Max Power Dissipation: 2W
    • Part Status: Discontinued
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Gate to Source Voltage (Vgs): 8V
    • Subcategory: Other Transistors
    • Drain to Source Breakdown Voltage: -12V
    • Dual Supply Voltage: -12V
    • Width: 3.9878mm
    • Series: HEXFET?
    • Resistance: 17mOhm
    • Length: 4.9784mm
    • Fall Time (Typ): 260 ns
    • Vgs(th) (Max) @ Id: 900mV @ 250μA
    • Turn-Off Delay Time: 340 ns
    • Nominal Vgs: -900 mV
    • Current Rating: -9.2A
    • Rds On (Max) @ Id, Vgs: 17m Ω @ 9.2A, 4.5V
    • Base Part Number: IRF7329PBF
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Packaging: Tube
    • Termination: SMD/SMT
    • Terminal Finish: Matte Tin (Sn)
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Published: 2004
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Operating Mode: ENHANCEMENT MODE
    • Additional Feature: HIGH RELIABILITY
    • Turn On Delay Time: 10 ns
    • Voltage - Rated DC: -12V
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Height: 1.4986mm
    • FET Feature: Logic Level Gate
    • FET Type: 2 P-Channel (Dual)
    • Current - Continuous Drain (Id) @ 25°C: 9.2A
    • Rise Time: 8.6 ns
    • Row Spacing: 6.3 mm
    • Threshold Voltage: -900mV
    • Continuous Drain Current (ID): -9.2A
    • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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