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  • Manufacturer No:
    IRF1010ZSTRLPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF1010ZSTRLPBF
  • SKU:
    2691743
  • Description:
    MOSFET N-CH 55V 75A D2PAK

IRF1010ZSTRLPBF Details

MOSFET N-CH 55V 75A D2PAK

IRF1010ZSTRLPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • Published: 2001
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Rise Time: 150 ns
  • Series: HEXFET?
  • Height: 4.826mm
  • Length: 10.668mm
  • Power Dissipation: 140W
  • Power Dissipation-Max: 140W Tc
  • Drain-source On Resistance-Max: 0.0075Ohm
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Rds On (Max) @ Id, Vgs: 7.5m Ω @ 75A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Continuous Drain Current (ID): 75A
  • Width: 9.65mm
  • Turn On Delay Time: 18 ns
  • Turn-Off Delay Time: 36 ns
  • Current - Continuous Drain (Id) @ 25°C: 75A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Fall Time (Typ): 92 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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