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Inventory:2193
  • Qty Unit Price price
  • 1 $7034.486 $7034.486
  • 10 $6964.837 $69648.37
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  • 1000 $6827.601 $6827601
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  • Manufacturer No:
    IRF7749L1TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7749L1TRPBF
  • SKU:
    2694193
  • Description:
    MOSFET N-CH 60V 33A DIRECTFETL8

IRF7749L1TRPBF Details

MOSFET N-CH 60V 33A DIRECTFETL8

IRF7749L1TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Published: 2013
  • Drain to Source Breakdown Voltage: 60V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Number of Pins: 15
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation: 3.3W
  • Turn-Off Delay Time: 78 ns
  • Rise Time: 43ns
  • Package / Case: DirectFET? Isometric L8
  • Supplier Device Package: DIRECTFET L8
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
  • Input Capacitance: 12.32nF
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Drain to Source Voltage (Vdss): 60V
  • Max Operating Temperature: 175°C
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Continuous Drain Current (ID): 200A
  • Turn On Delay Time: 17 ns
  • Fall Time (Typ): 39 ns
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Drain to Source Resistance: 1.1mOhm
  • Power Dissipation-Max: 3.3W Ta 125W Tc
  • Rds On Max: 1.5 mΩ
  • Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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