IRF7341TRPBFInfineon
    Add to like
    Add to project list
    Inventory:5454
    • Qty Unit Price price
    • 1 $1583.802 $1583.802
    • 10 $1568.12 $15681.2
    • 100 $1552.594 $155259.4
    • 1000 $1537.221 $1537221
    • 10000 $1522 $15220000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF7341TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7341TRPBF
    • SKU：
      2696517
    • Description：
      MOSFET 2N-CH 55V 4.7A 8-SOIC

    User Guide

    User Guide

    IRF7341TRPBF Details

    MOSFET 2N-CH 55V 4.7A 8-SOIC

    IRF7341TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Dual
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Transistor Application: SWITCHING
    • Drain to Source Breakdown Voltage: 55V
    • Dual Supply Voltage: 55V
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Width: 3.9878mm
    • Fall Time (Typ): 13 ns
    • Recovery Time: 90 ns
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Current Rating: 4.7A
    • Drain Current-Max (Abs) (ID): 5.1A
    • Rise Time: 3.2 ns
    • Nominal Vgs: 1 V
    • Turn On Delay Time: 8.3 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
    • Base Part Number: IRF7341PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Max Junction Temperature (Tj): 150°C
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Published: 2004
    • Threshold Voltage: 1V
    • Height: 1.75mm
    • Operating Mode: ENHANCEMENT MODE
    • Voltage - Rated DC: 55V
    • Subcategory: FET General Purpose Power
    • Resistance: 50mOhm
    • Series: HEXFET?
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Turn-Off Delay Time: 32 ns
    • Continuous Drain Current (ID): 4.7A
    • Lead Free: Contains Lead, Lead Free
    • Length: 4.9784mm
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Row Spacing: 6.3 mm
    • Avalanche Energy Rating (Eas): 140 mJ
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 4.7A, 10V
    Search for similar products

    IRF7341TRPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF7341TRPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via