IRF7324TRPBFInfineon
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    Inventory:15263
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    • 1 $2252.911 $2252.911
    • 10 $2230.604 $22306.04
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    • Manufacturer No：
      IRF7324TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7324TRPBF
    • SKU：
      2697769
    • Description：
      MOSFET 2P-CH 20V 9A 8-SOIC

    User Guide

    User Guide

    IRF7324TRPBF Details

    MOSFET 2P-CH 20V 9A 8-SOIC

    IRF7324TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Dual
    • Max Power Dissipation: 2W
    • Drain to Source Voltage (Vdss): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Height: 1.75mm
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: Other Transistors
    • Current - Continuous Drain (Id) @ 25°C: 9A
    • Width: 3.9878mm
    • Drain to Source Breakdown Voltage: -20V
    • FET Feature: Logic Level Gate
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Rise Time: 36 ns
    • Lead Free: Contains Lead, Lead Free
    • Fall Time (Typ): 190 ns
    • Length: 4.9784mm
    • Recovery Time: 270 ns
    • Current Rating: -9A
    • Rds On (Max) @ Id, Vgs: 18m Ω @ 9A, 4.5V
    • Base Part Number: IRF7324PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Gate to Source Voltage (Vgs): 12V
    • Max Junction Temperature (Tj): 150°C
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Published: 2004
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Transistor Application: SWITCHING
    • Additional Feature: HIGH RELIABILITY
    • Drain Current-Max (Abs) (ID): 9A
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Series: HEXFET?
    • Voltage - Rated DC: -20V
    • Turn On Delay Time: 17 ns
    • Resistance: 18mOhm
    • FET Type: 2 P-Channel (Dual)
    • Threshold Voltage: -1V
    • Turn-Off Delay Time: 170 ns
    • Pulsed Drain Current-Max (IDM): 71A
    • Continuous Drain Current (ID): -9A
    • Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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