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  • Manufacturer No:
    IRF6631TR1PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF6631TR1PBF
  • SKU:
    2707522
  • Description:
    MOSFET N-CH 30V 13A DIRECTFET

IRF6631TR1PBF Details

MOSFET N-CH 30V 13A DIRECTFET

IRF6631TR1PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Min Operating Temperature: -40°C
  • Number of Pins: 5
  • Published: 2006
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Voltage (Vdss): 30V
  • Current Rating: 13A
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -40°C~150°C TJ
  • Turn On Delay Time: 15 ns
  • Length: 4.826mm
  • Fall Time (Typ): 4.9 ns
  • Rise Time: 18ns
  • Vgs(th) (Max) @ Id: 2.35V @ 25μA
  • Height: 506μm
  • Power Dissipation-Max: 2.2W Ta 42W Tc
  • Input Capacitance: 1.45nF
  • Rds On Max: 7.8 mΩ
  • Current - Continuous Drain (Id) @ 25°C: 13A Ta 57A Tc
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Radiation Hardening: No
  • Part Status: Obsolete
  • REACH SVHC: No SVHC
  • Max Operating Temperature: 150°C
  • Continuous Drain Current (ID): 10A
  • Voltage - Rated DC: 30V
  • Drain to Source Breakdown Voltage: 30V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Series: HEXFET?
  • Turn-Off Delay Time: 18 ns
  • Power Dissipation: 42W
  • Nominal Vgs: 1.8 V
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Drain to Source Resistance: 10.8mOhm
  • Package / Case: DirectFET? Isometric SQ
  • Supplier Device Package: DIRECTFET? SQ
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 13A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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