IRFI1010NPBFInfineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRFI1010NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFI1010NPBF
    • SKU：
      2711110
    • Description：
      N-Channel 55 V 49A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak

    User Guide

    User Guide

    IRFI1010NPBF Details

    N-Channel 55 V 49A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak

    IRFI1010NPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Published: 1997
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Voltage - Rated DC: 55V
    • JEDEC-95 Code: TO-220AB
    • Turn-Off Delay Time: 40 ns
    • Package / Case: TO-220-3 Full Pack
    • Height: 9.8mm
    • Resistance: 12mOhm
    • Continuous Drain Current (ID): 49A
    • Fall Time (Typ): 46 ns
    • Power Dissipation: 47W
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Power Dissipation-Max: 58W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
    • Rds On (Max) @ Id, Vgs: 12m Ω @ 26A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 55V
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Turn On Delay Time: 11 ns
    • Width: 4.826mm
    • Drain Current-Max (Abs) (ID): 44A
    • Current Rating: 49A
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Rise Time: 66 ns
    • Pulsed Drain Current-Max (IDM): 290A
    • Current - Continuous Drain (Id) @ 25°C: 49A Tc
    • Length: 10.6172mm
    Search for similar products

    IRFI1010NPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRFI1010NPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via