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- Manufacturer No：IRF5803TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF5803TRPBF
- SKU：2712991
- Description：MOSFET P-CH 40V 3.4A 6-TSOP
User Guide
User Guide
IRF5803TRPBF Details
MOSFET P-CH 40V 3.4A 6-TSOP
IRF5803TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Pins: 6
- Terminal Finish: Matte Tin (Sn)
- Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 40V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Width: 1.4986mm
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Threshold Voltage: -3V
- Drain to Source Breakdown Voltage: -40V
- Rise Time: 550 ns
- Turn-Off Delay Time: 88 ns
- Resistance: 112mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
- Continuous Drain Current (ID): -3.4A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Lead Free: Contains Lead
- REACH SVHC: No SVHC
- Max Junction Temperature (Tj): 150°C
- Power Dissipation: 2W
- Published: 2001
- Operating Temperature: -55°C~150°C TJ
- Height: 1.45mm
- Length: 3.1mm
- Fall Time (Typ): 50 ns
- FET Type: P-Channel
- Series: HEXFET?
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Voltage - Rated DC: -40V
- Turn On Delay Time: 43 ns
- Power Dissipation-Max: 2W Ta
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 3.4A Ta
- Current Rating: -3.4A
- Rds On (Max) @ Id, Vgs: 112m Ω @ 3.4A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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