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- Manufacturer No：SI8401DB-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI8401DB-T1-E3
- SKU：271907
- Description：MOSFET P-CH 20V 3.6A 2X2 4-MFP
User Guide
User Guide
SI8401DB-T1-E3 Details
MOSFET P-CH 20V 3.6A 2X2 4-MFP
SI8401DB-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 4
- Pin Count: 4
- Termination: SMD/SMT
- Gate to Source Voltage (Vgs): 12V
- Width: 1.6mm
- REACH SVHC: Unknown
- Element Configuration: Single
- Terminal Position: BOTTOM
- Terminal Form: BALL
- Factory Lead Time: 33 Weeks
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Series: TrenchFET?
- Vgs (Max): ±12V
- Rise Time: 28 ns
- Resistance: 65mOhm
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Turn-Off Delay Time: 88 ns
- Current - Continuous Drain (Id) @ 25°C: 3.6A Ta
- Power Dissipation: 2.77W
- Power Dissipation-Max: 1.47W Ta
- Rds On (Max) @ Id, Vgs: 65m Ω @ 1A, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 4
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Length: 1.6mm
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Drain to Source Breakdown Voltage: -20V
- Turn On Delay Time: 17 ns
- Fall Time (Typ): 28 ns
- Threshold Voltage: -4.5V
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Height: 360μm
- Package / Case: 4-XFBGA, CSPBGA
- Continuous Drain Current (ID): -3.6A
- Nominal Vgs: -4.5 V
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