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- Manufacturer No：IPP60R180P7XKSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPP60R180P7XKSA1
- SKU：2728891
- Description：N-Channel 650 V 180 mOhm 25 nC CoolMOS? Power Mosfet - TO-220
User Guide
User Guide
IPP60R180P7XKSA1 Details
N-Channel 650 V 180 mOhm 25 nC CoolMOS? Power Mosfet - TO-220
IPP60R180P7XKSA1 Specification Parameters
- Part Status: Active
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Published: 2014
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Pulsed Drain Current-Max (IDM): 53A
- Current - Continuous Drain (Id) @ 25°C: 18A Tc
- Drain-source On Resistance-Max: 0.18Ohm
- Avalanche Energy Rating (Eas): 56 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V
- Surface Mount: NO
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Pbfree Code: yes
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Factory Lead Time: 18 Weeks
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss): 650V
- JESD-30 Code: R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Series: CoolMOS? P7
- Power Dissipation-Max: 72W Tc
- Vgs(th) (Max) @ Id: 4V @ 280μA
- Rds On (Max) @ Id, Vgs: 180m Ω @ 5.6A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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