SI7149ADP-T1-GE3
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountNumber of Elements
1Number of Channels
1ECCN Code
EAR99Radiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinNumber of Pins
8Terminal Position
DUALREACH SVHC
No SVHCPeak Reflow Temperature (Cel)
260Number of Terminations
5Time@Peak Reflow Temperature-Max (s)
30Max Junction Temperature (Tj)
150°CFactory Lead Time
14 WeeksPublished
2014Gate to Source Voltage (Vgs)
25VTransistor Element Material
SILICONElement Configuration
SingleDrain to Source Voltage (Vdss)
30VOperating Temperature
-55°C~150°C TJPackaging
Cut Tape (CT)Technology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODETerminal Form
C BENDCase Connection
DRAINDrive Voltage (Max Rds On,Min Rds On)
4.5V 10VFET Type
P-ChannelFall Time (Typ)
12 nsRise Time
12 nsPulsed Drain Current-Max (IDM)
300AVgs(th) (Max) @ Id
2.5V @ 250μAHeight
1.12mmThreshold Voltage
-2.5VSeries
TrenchFET?Drain to Source Breakdown Voltage
-30VVgs (Max)
±25VPackage / Case
PowerPAK? SO-8Power Dissipation
48WCurrent - Continuous Drain (Id) @ 25°C
50A TcTurn-Off Delay Time
58 nsDrain-source On Resistance-Max
0.0052OhmGate Charge (Qg) (Max) @ Vgs
135nC @ 10VJESD-30 Code
R-PDSO-C5Power Dissipation-Max
5W Ta 48W TcContinuous Drain Current (ID)
-50ARds On (Max) @ Id, Vgs
5.2m Ω @ 15A, 10V