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- Manufacturer No：SI4599DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4599DY-T1-GE3
- SKU：284704
- Description：VISHAY - SI4599DY-T1-GE3 - Dual MOSFET, N and P Channel, 6.8 A, 40 V, 0.0295 ohm, 10 V, 1.4 V
User Guide
User Guide
SI4599DY-T1-GE3 Details
VISHAY - SI4599DY-T1-GE3 - Dual MOSFET, N and P Channel, 6.8 A, 40 V, 0.0295 ohm, 10 V, 1.4 V
SI4599DY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Length: 5mm
- Power Dissipation: 3W
- Drain to Source Breakdown Voltage: 40V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Turn-Off Delay Time: 30 ns
- Height: 1.55mm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain Current-Max (Abs) (ID): 5.6A
- Resistance: 45mOhm
- Rise Time: 33 ns
- Turn On Delay Time: 44 ns
- FET Type: N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Rds On (Max) @ Id, Vgs: 35.5m Ω @ 5A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2014
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage: 1.4V
- Fall Time (Typ): 13 ns
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Weight: 540.001716mg
- Continuous Drain Current (ID): 6.8A
- Max Power Dissipation: 3.1W
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
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