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- Manufacturer No：SI5461EDC-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI5461EDC-T1-E3
- SKU：288692
- Description：MOSFET P-CH 20V 4.5A CHIPFET
User Guide
User Guide
SI5461EDC-T1-E3 Details
MOSFET P-CH 20V 4.5A CHIPFET
SI5461EDC-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Terminal Finish: MATTE TIN
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- FET Type: P-Channel
- Width: 1.7018mm
- Drain to Source Breakdown Voltage: -20V
- Resistance: 45mOhm
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Turn On Delay Time: 2.5 μs
- Rise Time: 4.5 μs
- Current - Continuous Drain (Id) @ 25°C: 4.5A Ta
- Vgs(th) (Max) @ Id: 450mV @ 250μA (Min)
- Continuous Drain Current (ID): -6.2A
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Position: DUAL
- Gate to Source Voltage (Vgs): 12V
- Published: 2009
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Terminal Form: C BEND
- Drain Current-Max (Abs) (ID): 4.5A
- Length: 3.0988mm
- Power Dissipation: 1.3W
- Height: 1.0922mm
- Vgs (Max): ±12V
- Package / Case: 8-SMD, Flat Lead
- Fall Time (Typ): 4.5 μs
- Power Dissipation-Max: 1.3W Ta
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Turn-Off Delay Time: 27 μs
- Rds On (Max) @ Id, Vgs: 45m Ω @ 5A, 4.5V
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