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- Manufacturer No：SI9433BDY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI9433BDY-T1-E3
- SKU：301871
- Description：MOSFET P-CH 20V 4.5A 8-SOIC
User Guide
User Guide
SI9433BDY-T1-E3 Details
MOSFET P-CH 20V 4.5A 8-SOIC
SI9433BDY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID): 4.5A
- Height: 1.55mm
- Power Dissipation: 1.3W
- Fall Time (Typ): 55 ns
- Drain to Source Breakdown Voltage: -20V
- Turn-Off Delay Time: 65 ns
- Weight: 506.605978mg
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On): 2.7V 4.5V
- Continuous Drain Current (ID): -6.2A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Subcategory: Other Transistors
- FET Type: P-Channel
- Turn On Delay Time: 40 ns
- Resistance: 40mOhm
- Rise Time: 55 ns
- Vgs (Max): ±12V
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Power Dissipation-Max: 1.3W Ta
- Current - Continuous Drain (Id) @ 25°C: 4.5A Ta
- Threshold Voltage: -600mV
- Rds On (Max) @ Id, Vgs: 40m Ω @ 6.2A, 4.5V
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