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- Manufacturer No：SI4963BDY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4963BDY-T1-E3
- SKU：306990
- Description：MOSFET 2P-CH 20V 4.9A 8-SOIC
User Guide
User Guide
SI4963BDY-T1-E3 Details
MOSFET 2P-CH 20V 4.9A 8-SOIC
SI4963BDY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Length: 5mm
- Width: 4mm
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Height: 1.55mm
- Fall Time (Typ): 40 ns
- Drain to Source Breakdown Voltage: -20V
- Turn-Off Delay Time: 80 ns
- Power Dissipation: 1.1W
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Resistance: 32mOhm
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Base Part Number: SI4963
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Published: 2017
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Subcategory: Other Transistors
- Turn On Delay Time: 30 ns
- Continuous Drain Current (ID): 6.5A
- Rise Time: 40 ns
- FET Feature: Logic Level Gate
- Max Power Dissipation: 1.1W
- Drain Current-Max (Abs) (ID): 4.9A
- FET Type: 2 P-Channel (Dual)
- Weight: 186.993455mg
- Threshold Voltage: -600mV
- Rds On (Max) @ Id, Vgs: 32m Ω @ 6.5A, 4.5V
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