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- Manufacturer No：SI7806ADN-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7806ADN-T1-E3
- SKU：308509
- Description：MOSFET N-CH 30V 9A 1212-8
User Guide
User Guide
SI7806ADN-T1-E3 Details
MOSFET N-CH 30V 9A 1212-8
SI7806ADN-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Contact Plating: Tin
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Width: 3.05mm
- Rise Time: 10 ns
- Continuous Drain Current (ID): 9A
- Turn On Delay Time: 13 ns
- Series: TrenchFET?
- Height: 1.04mm
- Package / Case: PowerPAK? 1212-8
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Rds On (Max) @ Id, Vgs: 11m Ω @ 14A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Published: 2017
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Case Connection: DRAIN
- Length: 3.05mm
- Fall Time (Typ): 10 ns
- Drain Current-Max (Abs) (ID): 9A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Turn-Off Delay Time: 33 ns
- Power Dissipation-Max: 1.5W Ta
- Current - Continuous Drain (Id) @ 25°C: 9A Ta
- JESD-30 Code: S-XDSO-C5
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