SUM110N04-03-E3Vishay Siliconix
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    • Manufacturer No：
      SUM110N04-03-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      316396
    • Description：
      MOSFET 40V 110A 437.5W 2.8mohm @ 10V
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    • Manufacturer No：
      SUM110N04-03-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUM110N04-03-E3
    • SKU：
      316396
    • Description：
      MOSFET 40V 110A 437.5W 2.8mohm @ 10V

    User Guide

    User Guide

    SUM110N04-03-E3 Details

    MOSFET 40V 110A 437.5W 2.8mohm @ 10V

    SUM110N04-03-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 3
    • Termination: SMD/SMT
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 40V
    • FET Type: N-Channel
    • Height: 4.83mm
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Width: 9.65mm
    • Series: TrenchFET?
    • Continuous Drain Current (ID): 110A
    • Nominal Vgs: 4 V
    • Pulsed Drain Current-Max (IDM): 440A
    • Rise Time: 170ns
    • Drain-source On Resistance-Max: 0.0028Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V
    • Power Dissipation: 437.5W
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 4
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Published: 2009
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Dual Supply Voltage: 40V
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 25 ns
    • Reverse Recovery Time: 60 ns
    • Turn-Off Delay Time: 55 ns
    • Length: 10.41mm
    • Fall Time (Typ): 110 ns
    • Weight: 1.437803g
    • Current - Continuous Drain (Id) @ 25°C: 110A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Power Dissipation-Max: 3.75W Ta 375W Tc
    • Rds On (Max) @ Id, Vgs: 2.8m Ω @ 30A, 10V
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