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- Manufacturer No：SI4384DY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4384DY-T1-E3
- SKU：327540
- Description：MOSFET N-CH 30V 10A 8-SOIC
User Guide
User Guide
SI4384DY-T1-E3 Details
MOSFET N-CH 30V 10A 8-SOIC
SI4384DY-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Published: 2006
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Height: 1.5494mm
- Fall Time (Typ): 13 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Length: 4.9784mm
- Weight: 186.993455mg
- Current - Continuous Drain (Id) @ 25°C: 10A Ta
- Power Dissipation: 1.47W
- Rds On (Max) @ Id, Vgs: 8.5m Ω @ 15A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Continuous Drain Current (ID): 15A
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Turn On Delay Time: 10 ns
- Width: 3.9878mm
- Turn-Off Delay Time: 45 ns
- Rise Time: 13 ns
- Series: TrenchFET?
- Nominal Vgs: 1 V
- Additional Feature: FAST SWITCHING
- Resistance: 8.5mOhm
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Power Dissipation-Max: 1.47W Ta
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