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  • Manufacturer No:
    SI7942DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    332147
  • Description:
    Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
  • Quantity:
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Inventory:2766
  • Qty Unit Price price
  • 1 $2.916 $2.916
  • 10 $2.887 $28.87
  • 100 $2.858 $285.8
  • 1000 $2.829 $2829
  • 10000 $2.8 $28000

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  • Manufacturer No:
    SI7942DP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI7942DP-T1-E3
  • SKU:
    332147
  • Description:
    Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8

SI7942DP-T1-E3 Details

Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8

SI7942DP-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 8
  • Termination: SMD/SMT
  • Drain to Source Breakdown Voltage: 100V
  • Published: 2015
  • Time@Peak Reflow Temperature-Max (s): 40
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Terminal Form: C BEND
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Rise Time: 15 ns
  • Turn-Off Delay Time: 35 ns
  • Max Power Dissipation: 1.4W
  • FET Feature: Logic Level Gate
  • Series: TrenchFET?
  • Subcategory: FET General Purpose Powers
  • Continuous Drain Current (ID): 5.9A
  • Weight: 506.605978mg
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Package / Case: PowerPAK? SO-8 Dual
  • Rds On (Max) @ Id, Vgs: 49m Ω @ 5.9A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Number of Terminations: 6
  • Peak Reflow Temperature (Cel): 260
  • Dual Supply Voltage: 100V
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Gate to Source Voltage (Vgs): 20V
  • Length: 4.9mm
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Turn On Delay Time: 15 ns
  • Fall Time (Typ): 20 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation: 1.4W
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • FET Type: 2 N-Channel (Dual)
  • Nominal Vgs: 4 V
  • Height: 1.04mm
  • Resistance: 49mOhm
  • Width: 5.89mm
  • JESD-30 Code: R-XDSO-C6
  • Base Part Number: SI7942

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Excellent

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