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- Manufacturer No：SI7625DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7625DN-T1-GE3
- SKU：334057
- Description：P-Channel 30 V 7 mO 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8
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User Guide
SI7625DN-T1-GE3 Details
P-Channel 30 V 7 mO 5126 nC Surface Mount Power Mosfet - PowerPAK-1212-8
SI7625DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2010
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Drain Current-Max (Abs) (ID): 35A
- FET Type: P-Channel
- Series: TrenchFET?
- Threshold Voltage: -1V
- Package / Case: PowerPAK? 1212-8
- Avalanche Energy Rating (Eas): 20 mJ
- JESD-30 Code: S-XDSO-C5
- Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Resistance: 7mOhm
- Power Dissipation: 3.7W
- Current - Continuous Drain (Id) @ 25°C: 35A Tc
- Continuous Drain Current (ID): 17.3A
- Power Dissipation-Max: 3.7W Ta 52W Tc
- Rds On (Max) @ Id, Vgs: 7m Ω @ 15A, 10V
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