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  • Manufacturer No:
    SIHG47N60EF-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    342365
  • Description:
    MOSFET N-Channel 600V EF Series
  • Quantity:
      • RFQ
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  • Material flow:
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Inventory:473
  • Qty Unit Price price
  • 1 $7.9 $7.9
  • 10 $7.821 $78.21
  • 100 $7.743 $774.3
  • 1000 $7.666 $7666
  • 10000 $7.59 $75900

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  • Manufacturer No:
    SIHG47N60EF-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SIHG47N60EF-GE3
  • SKU:
    342365
  • Description:
    MOSFET N-Channel 600V EF Series

SIHG47N60EF-GE3 Details

MOSFET N-Channel 600V EF Series

SIHG47N60EF-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Published: 2014
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • DS Breakdown Voltage-Min: 600V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Vgs (Max): ±30V
  • JEDEC-95 Code: TO-247AC
  • Weight: 38.000013g
  • Drain-source On Resistance-Max: 0.065Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Turn-Off Delay Time: 91 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 4854pF @ 100V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 600V
  • Gate to Source Voltage (Vgs): 30V
  • Factory Lead Time: 22 Weeks
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Case Connection: DRAIN
  • Turn On Delay Time: 30 ns
  • Package / Case: TO-247-3
  • Continuous Drain Current (ID): 47A
  • Fall Time (Typ): 56 ns
  • Current - Continuous Drain (Id) @ 25°C: 47A Tc
  • Rise Time: 56ns
  • Power Dissipation-Max: 379W Tc
  • Rds On (Max) @ Id, Vgs: 67m Ω @ 24A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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