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- Manufacturer No：IXGH28N120BD1
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：IXGH28N120BD1
- SKU：3909738
- Description：IGBT 1200V 50A 250W TO247
User Guide
User Guide
IXGH28N120BD1 Details
IGBT 1200V 50A 250W TO247
IXGH28N120BD1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2009
- Element Configuration: Single
- Gate-Emitter Voltage-Max: 20V
- Max Collector Current: 50A
- Current - Collector Pulsed (Icm): 150A
- Power - Max: 250W
- Collector Emitter Voltage (VCEO): 1.2kV
- Case Connection: COLLECTOR
- Reverse Recovery Time: 40 ns
- Subcategory: Insulated Gate BIP Transistors
- JEDEC-95 Code: TO-247AD
- Turn On Time: 63 ns
- Gate Charge: 92nC
- Switching Energy: 2.2mJ (off)
- Base Part Number: IXG*28N120
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max: 5V
- Number of Terminations: 3
- Pin Count: 3
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Input Type: Standard
- Operating Temperature: -55°C~150°C TJ
- Polarity/Channel Type: N-CHANNEL
- Max Power Dissipation: 250W
- Collector Emitter Breakdown Voltage: 1.2kV
- Package / Case: TO-247-3
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Transistor Application: POWER CONTROL
- IGBT Type: PT
- Weight: 6.500007g
- Turn Off Time-Nom (toff): 590 ns
- Test Condition: 960V, 28A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
- Td (on/off) @ 25°C: 30ns/210ns
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