IXTK150N15PIXYS
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    • Manufacturer No：
      IXTK150N15P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3909774
    • Description：
      MOSFET N-CH 150V 150A TO-264
    • Quantity：
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    • Qty Unit Price price
    • 1 $10.356 $10.356
    • 10 $10.253 $102.53
    • 100 $10.151 $1015.1
    • 1000 $10.05 $10050
    • 10000 $9.95 $99500

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    • Manufacturer No：
      IXTK150N15P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTK150N15P
    • SKU：
      3909774
    • Description：
      MOSFET N-CH 150V 150A TO-264

    User Guide

    User Guide

    IXTK150N15P Details

    MOSFET N-CH 150V 150A TO-264

    IXTK150N15P Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Reach Compliance Code: unknown
    • Published: 2006
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JESD-30 Code: R-PSFM-T3
    • Additional Feature: AVALANCHE RATED
    • Fall Time (Typ): 28 ns
    • Package / Case: TO-264-3, TO-264AA
    • Avalanche Energy Rating (Eas): 2500 mJ
    • Current - Continuous Drain (Id) @ 25°C: 150A Tc
    • Series: PolarHT?
    • Power Dissipation: 714W
    • Power Dissipation-Max: 714W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Drain to Source Breakdown Voltage: 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 28 Weeks
    • Continuous Drain Current (ID): 150A
    • Turn-Off Delay Time: 100 ns
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Rise Time: 33 ns
    • Drain-source On Resistance-Max: 0.013Ohm
    • Pulsed Drain Current-Max (IDM): 340A
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
    • Rds On (Max) @ Id, Vgs: 13m Ω @ 500mA, 10V
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