IRFP260
IXYS
Moisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1RoHS Status
RoHS CompliantECCN Code
EAR99Pbfree Code
yesLead Free
Lead FreePart Status
ObsoleteTime@Peak Reflow Temperature-Max (s)
NOT SPECIFIEDPeak Reflow Temperature (Cel)
NOT SPECIFIEDPackaging
TubeNumber of Terminations
3Number of Pins
3Pin Count
3Qualification Status
Not QualifiedDrain to Source Breakdown Voltage
200VDrive Voltage (Max Rds On,Min Rds On)
10VTransistor Element Material
SILICONElement Configuration
SingleGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJPublished
2000FET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEVgs (Max)
±20VCase Connection
DRAINVgs(th) (Max) @ Id
4V @ 250μAPackage / Case
TO-247-3Continuous Drain Current (ID)
46ATurn-Off Delay Time
90 nsRise Time
30nsFall Time (Typ)
28 nsJEDEC-95 Code
TO-247ADPower Dissipation
280WDrain-source On Resistance-Max
0.055OhmGate Charge (Qg) (Max) @ Vgs
230nC @ 10VPulsed Drain Current-Max (IDM)
184ACurrent - Continuous Drain (Id) @ 25°C
46A TcPower Dissipation-Max
280W TcInput Capacitance (Ciss) (Max) @ Vds
3900pF @ 25V