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- Manufacturer No：IXFH21N50
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH21N50
- SKU：3911632
- Description：MOSFET N-CH 500V 21A TO-247AD
User Guide
User Guide
IXFH21N50 Details
MOSFET N-CH 500V 21A TO-247AD
IXFH21N50 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- ECCN Code: EAR99
- Moisture Sensitivity Level (MSL): Not Applicable
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Dual Supply Voltage: 500V
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Fall Time (Typ): 30 ns
- Recovery Time: 250 ns
- Current Rating: 21A
- Turn-Off Delay Time: 65 ns
- Nominal Vgs: 4 V
- Series: HiPerFET?
- Current - Continuous Drain (Id) @ 25°C: 21A Tc
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Gate to Source Voltage (Vgs): 20V
- Published: 2002
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Resistance: 250mOhm
- Continuous Drain Current (ID): 21A
- JEDEC-95 Code: TO-247AD
- Power Dissipation-Max: 300W Tc
- Pulsed Drain Current-Max (IDM): 84A
- Rise Time: 33ns
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Rds On (Max) @ Id, Vgs: 250m Ω @ 10.5A, 10V
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