IXTV22N50PIXYS
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    IXTV22N50P123
    • Manufacturer No：
      IXTV22N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3896130
    • Description：
      Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) PLUS 220
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    IXTV22N50P
    • Manufacturer No：
      IXTV22N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTV22N50P
    • SKU：
      3896130
    • Description：
      Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) PLUS 220

    User Guide

    User Guide

    IXTV22N50P Details

    Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) PLUS 220

    IXTV22N50P Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • RoHS Status: RoHS Compliant
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 22A
    • Case Connection: DRAIN
    • Vgs (Max): ±30V
    • Additional Feature: AVALANCHE RATED
    • Power Dissipation: 350W
    • Rise Time: 27ns
    • Drain-source On Resistance-Max: 0.27Ohm
    • Series: PolarHV?
    • Package / Case: TO-220-3, Short Tab
    • Rds On (Max) @ Id, Vgs: 270m Ω @ 11A, 10V
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • Published: 2006
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 500V
    • Gate to Source Voltage (Vgs): 30V
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Current Rating: 22A
    • Pulsed Drain Current-Max (IDM): 50A
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 75 ns
    • Fall Time (Typ): 21 ns
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 22A Tc
    • Avalanche Energy Rating (Eas): 750 mJ
    • Power Dissipation-Max: 350W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
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