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- Manufacturer No：IXTP96P085T
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTP96P085T
- SKU：3912001
- Description：MOSFET P-CH 85V 96A TO-220
User Guide
User Guide
IXTP96P085T Details
MOSFET P-CH 85V 96A TO-220
IXTP96P085T Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Published: 2010
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 15V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Drain to Source Voltage (Vdss): 85V
- Subcategory: Other Transistors
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Vgs (Max): ±15V
- Continuous Drain Current (ID): 96A
- Series: TrenchP?
- Current - Continuous Drain (Id) @ 25°C: 96A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
- Rds On (Max) @ Id, Vgs: 13m Ω @ 48A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Factory Lead Time: 24 Weeks
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Case Connection: DRAIN
- FET Type: P-Channel
- Additional Feature: AVALANCHE RATED
- Terminal Finish: PURE TIN
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Power Dissipation: 298W
- Power Dissipation-Max: 298W Tc
- Drain to Source Breakdown Voltage: -85V
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