IXFK64N50PIXYS
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    • Manufacturer No：
      IXFK64N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3913184
    • Description：
      MOSFET N-CH 500V 64A TO-264
    • Quantity：
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    • Qty Unit Price price
    • 1 $17.775 $17.775
    • 10 $17.599 $175.99
    • 100 $17.424 $1742.4
    • 1000 $17.251 $17251
    • 10000 $17.08 $170800

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    • Manufacturer No：
      IXFK64N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFK64N50P
    • SKU：
      3913184
    • Description：
      MOSFET N-CH 500V 64A TO-264

    User Guide

    User Guide

    IXFK64N50P Details

    MOSFET N-CH 500V 64A TO-264

    IXFK64N50P Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Published: 2006
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 500V
    • Gate to Source Voltage (Vgs): 30V
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Factory Lead Time: 30 Weeks
    • Subcategory: FET General Purpose Power
    • Rise Time: 25 ns
    • Additional Feature: AVALANCHE RATED
    • Resistance: 85mOhm
    • Package / Case: TO-264-3, TO-264AA
    • Continuous Drain Current (ID): 64A
    • Avalanche Energy Rating (Eas): 2500 mJ
    • Current - Continuous Drain (Id) @ 25°C: 64A Tc
    • Power Dissipation-Max: 830W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Threshold Voltage: 5.5V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Pulsed Drain Current-Max (IDM): 150A
    • Vgs (Max): ±30V
    • Fall Time (Typ): 22 ns
    • Turn-Off Delay Time: 85 ns
    • Current Rating: 64A
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Series: HiPerFET?, PolarHT?
    • Power Dissipation: 830W
    • Vgs(th) (Max) @ Id: 5.5V @ 8mA
    • Rds On (Max) @ Id, Vgs: 85m Ω @ 32A, 10V
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