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- Manufacturer No：MT48H16M16LFBF-75:H
- Manufacturer：Micron
- Category：Memory
- Datasheet：MT48H16M16LFBF-75:H
- SKU：3934033
- Description：Obsolete 3-STATE 2012 BOTTOM ic memory 0C~70C TA 1.7V 256Mb 80mA
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User Guide
MT48H16M16LFBF-75:H Details
Obsolete 3-STATE 2012 BOTTOM ic memory 0C~70C TA 1.7V 256Mb 80mA
MT48H16M16LFBF-75:H Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Lead Free: Lead Free
- Packaging: Tray
- Published: 2012
- Supply Voltage: 1.8V
- Height Seated (Max): 1mm
- Terminal Pitch: 0.8mm
- Operating Temperature: 0°C~70°C TA
- Length: 8mm
- Nominal Supply Current: 80mA
- Number of Pins: 54
- Data Bus Width: 16b
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Supply Voltage-Max (Vsup): 1.95V
- Standby Current-Max: 0.00001A
- Access Time: 5.4ns
- Address Bus Width: 15b
- Memory Size: 256Mb 16M x 16
- Density: 256 Mb
- Package / Case: 54-VFBGA
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Operating Supply Voltage: 1.8V
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Number of Terminations: 54
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Memory Format: DRAM
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Voltage - Supply: 1.7V~1.95V
- Interleaved Burst Length: 1248
- Sequential Burst Length: 1248FP
- Organization: 16MX16
- Technology: SDRAM - Mobile LPSDR
- Base Part Number: MT48H16M16
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Micron — Manufacturer Introduction
Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.
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