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- Manufacturer No：NX7002BKR
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：NX7002BKR
- SKU：3964148
- Description：MOSFET 60V N-channel Trench MOSFET
User Guide
User Guide
NX7002BKR Details
MOSFET 60V N-channel Trench MOSFET
NX7002BKR Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Pin Count: 3
- Drain to Source Voltage (Vdss): 60V
- Factory Lead Time: 4 Weeks
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- Resistance: 2.2Ohm
- Reference Standard: IEC-60134
- JEDEC-95 Code: TO-236AB
- Vgs(th) (Max) @ Id: 2.1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 270mA Ta
- Rds On (Max) @ Id, Vgs: 2.8 Ω @ 200mA, 10V
- Power Dissipation-Max: 310mW Ta 1.67W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 60V
- Published: 2014
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- JESD-30 Code: R-PDSO-G3
- Continuous Drain Current (ID): 270mA
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Drive Voltage (Max Rds On,Min Rds On): 5V 10V
- Drain Current-Max (Abs) (ID): 0.27A
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
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