SIA912DJ-T1-GE3Vishay Siliconix
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    SIA912DJ-T1-GE3123
    • Manufacturer No：
      SIA912DJ-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      408673
    • Description：
      MOSFET 12V 4.5A 6.5W 40mohm @ 4.5V
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    SIA912DJ-T1-GE3
    • Manufacturer No：
      SIA912DJ-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SIA912DJ-T1-GE3
    • SKU：
      408673
    • Description：
      MOSFET 12V 4.5A 6.5W 40mohm @ 4.5V

    User Guide

    User Guide

    SIA912DJ-T1-GE3 Details

    MOSFET 12V 4.5A 6.5W 40mohm @ 4.5V

    SIA912DJ-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 6
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 12V
    • Element Configuration: Dual
    • REACH SVHC: Unknown
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • Gate to Source Voltage (Vgs): 8V
    • Continuous Drain Current (ID): 4.5A
    • Fall Time (Typ): 15 ns
    • Rise Time: 15ns
    • Power - Max: 6.5W
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Power Dissipation: 1.9W
    • Nominal Vgs: 1 V
    • Rds On (Max) @ Id, Vgs: 40m Ω @ 4.2A, 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Terminations: 6
    • Pin Count: 6
    • Drain to Source Voltage (Vdss): 12V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Published: 2014
    • Transistor Element Material: SILICON
    • Threshold Voltage: 1V
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Turn-Off Delay Time: 35 ns
    • Turn On Delay Time: 5 ns
    • Resistance: 40mOhm
    • Series: TrenchFET?
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Max Power Dissipation: 1.9W
    • Package / Case: PowerPAK? SC-70-6 Dual
    • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
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