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  • Manufacturer No:
    FDS5672
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4138804
  • Description:
    In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672
  • Quantity:
      • RFQ
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  • Material flow:
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Inventory:2037
  • Qty Unit Price price
  • 1 $1.965 $1.965
  • 10 $1.945 $19.45
  • 100 $1.925 $192.5
  • 1000 $1.905 $1905
  • 10000 $1.886 $18860

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  • Manufacturer No:
    FDS5672
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDS5672
  • SKU:
    4138804
  • Description:
    In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672

FDS5672 Details

In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672

FDS5672 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Voltage - Rated DC: 60V
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Published: 2001
  • Operating Temperature: -55°C~150°C TJ
  • Height: 1.75mm
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Continuous Drain Current (ID): 12mA
  • Rise Time: 20 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Fall Time (Typ): 14 ns
  • Nominal Vgs: 4 V
  • Power Dissipation-Max: 2.5W Ta
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Factory Lead Time: 12 Weeks
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 60V
  • Transistor Element Material: SILICON
  • Length: 5mm
  • Resistance: 10mOhm
  • Width: 4mm
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • FET Type: N-Channel
  • Current Rating: 12A
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Power Dissipation: 2.5W
  • Turn-Off Delay Time: 35 ns
  • Turn On Delay Time: 13 ns
  • Series: PowerTrench?
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Current - Continuous Drain (Id) @ 25°C: 12A Tc
  • Weight: 130mg
  • Rds On (Max) @ Id, Vgs: 10m Ω @ 12A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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