Add to like
Add to project list
Inventory:954
  • Qty Unit Price price
  • 1 $3.873 $3.873
  • 10 $3.834 $38.34
  • 100 $3.796 $379.6
  • 1000 $3.758 $3758
  • 10000 $3.72 $37200

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    STB150NF55T4
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STB150NF55T4
  • SKU:
    4535973
  • Description:
    Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R

STB150NF55T4 Details

Trans MOSFET N-CH 55V 120A 3-Pin(2+Tab) D2PAK T/R

STB150NF55T4 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Pin Count: 3
  • Termination: SMD/SMT
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Width: 6.35mm
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Drain to Source Breakdown Voltage: 55V
  • Dual Supply Voltage: 55V
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Turn On Delay Time: 35 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Current Rating: 120A
  • Fall Time (Typ): 80 ns
  • Nominal Vgs: 4 V
  • Rise Time: 180 ns
  • Pulsed Drain Current-Max (IDM): 480A
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Base Part Number: STB150N
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Length: 6.35mm
  • Height: 6.35mm
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Voltage - Rated DC: 55V
  • Peak Reflow Temperature (Cel): 245
  • Power Dissipation: 300W
  • Subcategory: FET General Purpose Power
  • Continuous Drain Current (ID): 60A
  • Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
  • Resistance: 6mOhm
  • Weight: 4.535924g
  • Turn-Off Delay Time: 140 ns
  • Power Dissipation-Max: 300W Tc
  • Current - Continuous Drain (Id) @ 25°C: 120A Tc
  • Series: STripFET? II
  • Avalanche Energy Rating (Eas): 850 mJ
  • Rds On (Max) @ Id, Vgs: 6m Ω @ 60A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via