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- Manufacturer No：IRF730
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF730
- SKU：4541611
- Description：PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 5.5A Tc 55A 100W 9ns
User Guide
User Guide
IRF730 Details
PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 5.5A Tc 55A 100W 9ns
IRF730 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Voltage: 400V
- Power Dissipation: 100W
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 5.5A
- Current: 55A
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 5.5A Tc
- Series: PowerMESH? II
- Feedback Cap-Max (Crss): 65 pF
- Base Part Number: IRF7
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Drain-source On Resistance-Max: 1Ohm
- Turn-Off Delay Time: 15 ns
- Current Rating: 5.5A
- Fall Time (Typ): 9 ns
- Rise Time: 11ns
- Power Dissipation-Max: 100W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Rds On (Max) @ Id, Vgs: 1 Ω @ 3A, 10V
- Additional Feature: HIGH VOLTAGE, FAST SWITCHING
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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