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- Manufacturer No：STI23NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STI23NM60N
- SKU：4544427
- Description：MOSFET N-CH 600V 19A I2PAK
User Guide
User Guide
STI23NM60N Details
MOSFET N-CH 600V 19A I2PAK
STI23NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 40
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Turn On Delay Time: 25 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 90 ns
- Continuous Drain Current (ID): 9.5A
- Pulsed Drain Current-Max (IDM): 76A
- Power Dissipation-Max: 150W Tc
- Series: MDmesh? II
- Avalanche Energy Rating (Eas): 700 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
- Base Part Number: STI23N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Threshold Voltage: 3V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Power Dissipation: 150W
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Peak Reflow Temperature (Cel): 245
- Subcategory: FET General Purpose Power
- Rise Time: 15ns
- Drain Current-Max (Abs) (ID): 19A
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs (Max): ±25V
- Fall Time (Typ): 36 ns
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Drain-source On Resistance-Max: 0.18Ohm
- Current - Continuous Drain (Id) @ 25°C: 19A Tc
- Rds On (Max) @ Id, Vgs: 180m Ω @ 9.5A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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