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- Manufacturer No：STP30NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP30NM60N
- SKU：4559373
- Description：Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220 Tube
User Guide
User Guide
STP30NM60N Details
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220 Tube
STP30NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 25A
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 70 ns
- Nominal Vgs: 3 V
- Power Dissipation: 190W
- Current - Continuous Drain (Id) @ 25°C: 25A Tc
- Power Dissipation-Max: 190W Tc
- Avalanche Energy Rating (Eas): 900 mJ
- Base Part Number: STP30N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 100A
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs (Max): ±30V
- Resistance: 130mOhm
- Turn-Off Delay Time: 125 ns
- Rise Time: 24ns
- Series: MDmesh? II
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Rds On (Max) @ Id, Vgs: 130m Ω @ 12.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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