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- Manufacturer No：STP10N62K3
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP10N62K3
- SKU：4590798
- Description：MOSFET N-CH 620V 8.4A TO220
User Guide
User Guide
STP10N62K3 Details
MOSFET N-CH 620V 8.4A TO220
STP10N62K3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- JEDEC-95 Code: TO-220AB
- Rise Time: 15ns
- Length: 10.4mm
- Power Dissipation: 125W
- Resistance: 680mOhm
- Threshold Voltage: 3.75V
- Turn On Delay Time: 14.5 ns
- Power Dissipation-Max: 125W Tc
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Avalanche Energy Rating (Eas): 220 mJ
- Current - Continuous Drain (Id) @ 25°C: 8.4A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage: 650V
- Width: 4.6mm
- Vgs (Max): ±30V
- Height: 15.75mm
- Continuous Drain Current (ID): 8.4A
- Drain to Source Voltage (Vdss): 620V
- Fall Time (Typ): 31 ns
- Turn-Off Delay Time: 41 ns
- Vgs(th) (Max) @ Id: 4.5V @ 100μA
- Series: SuperMESH3?
- Nominal Vgs: 3.75 V
- Base Part Number: STP10
- Rds On (Max) @ Id, Vgs: 750m Ω @ 4A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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