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Inventory:1220
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  • Manufacturer No:
    STB12NK80ZT4
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STB12NK80ZT4
  • SKU:
    4594412
  • Description:
    MOSFET N-CH 800V 10.5A D2PAK

STB12NK80ZT4 Details

MOSFET N-CH 800V 10.5A D2PAK

STB12NK80ZT4 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Pin Count: 3
  • Termination: SMD/SMT
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Voltage - Rated DC: 800V
  • Dual Supply Voltage: 800V
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 20 ns
  • Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
  • Vgs (Max): ±30V
  • Turn-Off Delay Time: 70 ns
  • Rise Time: 18 ns
  • Current Rating: 10.5A
  • Threshold Voltage: 3.75V
  • Power Dissipation: 190W
  • Power Dissipation-Max: 190W Tc
  • Avalanche Energy Rating (Eas): 400 mJ
  • Nominal Vgs: 3.75 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
  • Rds On (Max) @ Id, Vgs: 750m Ω @ 5.25A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Peak Reflow Temperature (Cel): 245
  • Drain to Source Breakdown Voltage: 800V
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Height: 4.6mm
  • Turn On Delay Time: 30 ns
  • Length: 10.4mm
  • Pulsed Drain Current-Max (IDM): 42A
  • Resistance: 750mOhm
  • Continuous Drain Current (ID): 10.5A
  • Width: 9.35mm
  • Series: SuperMESH?
  • Vgs(th) (Max) @ Id: 4.5V @ 100μA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A Tc
  • Base Part Number: STB12N

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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