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IRF840LCSTRRPBF123
  • Manufacturer No:
    IRF840LCSTRRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    196532
  • Description:
    Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R
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  • Qty Unit Price price
  • 1 $1.415 $1.415
  • 10 $1.4 $14
  • 100 $1.386 $138.6
  • 1000 $1.372 $1372
  • 10000 $1.3579 $13579

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IRF840LCSTRRPBF
  • Manufacturer No:
    IRF840LCSTRRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF840LCSTRRPBF
  • SKU:
    196532
  • Description:
    Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R

IRF840LCSTRRPBF Details

Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R

IRF840LCSTRRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • DS Breakdown Voltage-Min: 500V
  • Operating Temperature: -55°C~150°C TJ
  • Continuous Drain Current (ID): 8A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Vgs (Max): ±30V
  • Length: 10.67mm
  • Width: 9.65mm
  • Fall Time (Typ): 19 ns
  • Weight: 1.437803g
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • JESD-30 Code: S-PSSO-G2
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 3
  • Published: 2016
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 500V
  • Gate to Source Voltage (Vgs): 30V
  • Drain Current-Max (Abs) (ID): 8A
  • FET Type: N-Channel
  • Height: 4.83mm
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn On Delay Time: 12 ns
  • Rise Time: 25ns
  • Additional Feature: AVALANCHE RATED
  • Turn-Off Delay Time: 27 ns
  • Current - Continuous Drain (Id) @ 25°C: 8A Tc
  • Drain-source On Resistance-Max: 0.85Ohm
  • Power Dissipation-Max: 3.1W Ta 125W Tc
  • Rds On (Max) @ Id, Vgs: 850m Ω @ 4.8A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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