Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：2N3019
- Manufacturer：MICROSS/On Semiconductor
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N3019
- SKU：8837687
- Description：Tray Through Hole 1 NPN Bipolar (BJT) Transistor 1A 800mW 140V 200C
User Guide
User Guide
2N3019 Details
Tray Through Hole 1 NPN Bipolar (BJT) Transistor 1A 800mW 140V 200C
2N3019 Specification Parameters
- Part Status: Active
- Number of Elements: 1
- Radiation Hardening: No
- Number of Pins: 3
- Factory Lead Time: 4 Weeks
- Max Collector Current: 1A
- Polarity: NPN
- Collector Emitter Breakdown Voltage: 80V
- Lifecycle Status: IN PRODUCTION (Last Updated: 3 weeks ago)
- Power Dissipation: 800mW
- Package / Case: TO-39
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Packaging: Tray
- Min Operating Temperature: -65°C
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Max Operating Temperature: 200°C
- Collector Emitter Voltage (VCEO): 80V
- Emitter Base Voltage (VEBO): 7V
- Max Power Dissipation: 800mW
- Collector Base Voltage (VCBO): 140V
Search for similar products
2N3019 Similar Products
The four parts on the right have similar specifications to MICROSS/On Semiconductor & 2N3019
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
