IXFH58N20IXYS
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    IXFH58N20123
    • Manufacturer No：
      IXFH58N20
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3896390
    • Description：
      MOSFET N-CH 200V 58A TO-247AD
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    IXFH58N20
    • Manufacturer No：
      IXFH58N20
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFH58N20
    • SKU：
      3896390
    • Description：
      MOSFET N-CH 200V 58A TO-247AD

    User Guide

    User Guide

    IXFH58N20 Details

    MOSFET N-CH 200V 58A TO-247AD

    IXFH58N20 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Not For New Designs
    • Published: 2000
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Rise Time: 15 ns
    • Recovery Time: 200 ns
    • Additional Feature: AVALANCHE RATED
    • Nominal Vgs: 4 V
    • Series: HiPerFET?
    • Current Rating: 58A
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Current - Continuous Drain (Id) @ 25°C: 58A Tc
    • Rds On (Max) @ Id, Vgs: 40m Ω @ 29A, 10V
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Moisture Sensitivity Level (MSL): Not Applicable
    • Factory Lead Time: 8 Weeks
    • Number of Terminations: 3
    • Pin Count: 3
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 200V
    • Time@Peak Reflow Temperature-Max (s): 10
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Operating Mode: ENHANCEMENT MODE
    • Power Dissipation: 300W
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-247-3
    • Resistance: 40mOhm
    • Fall Time (Typ): 16 ns
    • Power Dissipation-Max: 300W Tc
    • Continuous Drain Current (ID): 58A
    • Turn-Off Delay Time: 72 ns
    • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
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