IXFX170N20TIXYS
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    IXFX170N20T123
    • Manufacturer No：
      IXFX170N20T
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3895969
    • Description：
      MOSFET N-CH 200V 170A PLUS247
    • Quantity：
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    Inventory:17
    • Qty Unit Price price
    • 1 $14.585 $14.585
    • 10 $14.44 $144.4
    • 100 $14.297 $1429.7
    • 1000 $14.155 $14155
    • 10000 $14.014 $140140

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    IXFX170N20T
    • Manufacturer No：
      IXFX170N20T
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFX170N20T
    • SKU：
      3895969
    • Description：
      MOSFET N-CH 200V 170A PLUS247

    User Guide

    User Guide

    IXFX170N20T Details

    MOSFET N-CH 200V 170A PLUS247

    IXFX170N20T Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • Drain to Source Voltage (Vdss): 200V
    • Reach Compliance Code: unknown
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 30 Weeks
    • Case Connection: DRAIN
    • Package / Case: TO-247-3
    • Additional Feature: AVALANCHE RATED
    • Drain-source On Resistance-Max: 0.011Ohm
    • Pulsed Drain Current-Max (IDM): 470A
    • Series: GigaMOS?
    • Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
    • Power Dissipation-Max: 1150W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • DS Breakdown Voltage-Min: 200V
    • Published: 2009
    • Transistor Element Material: SILICON
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Terminal Finish: TIN SILVER COPPER
    • Continuous Drain Current (ID): 170A
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Current - Continuous Drain (Id) @ 25°C: 170A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
    • Rds On (Max) @ Id, Vgs: 11m Ω @ 60A, 10V
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