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- Manufacturer No：IXTX110N20L2
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTX110N20L2
- SKU：3912114
- Description：MOSFET N-CH 200V 110A PLUS247
User Guide
User Guide
IXTX110N20L2 Details
MOSFET N-CH 200V 110A PLUS247
IXTX110N20L2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Voltage (Vdss): 200V
- Published: 2009
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Continuous Drain Current (ID): 110A
- Drain-source On Resistance-Max: 0.024Ohm
- Avalanche Energy Rating (Eas): 5000 mJ
- Series: Linear L2?
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
- Rds On (Max) @ Id, Vgs: 24m Ω @ 55A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- DS Breakdown Voltage-Min: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Factory Lead Time: 28 Weeks
- Case Connection: DRAIN
- Transistor Application: AMPLIFIER
- Additional Feature: AVALANCHE RATED
- Pulsed Drain Current-Max (IDM): 275A
- Current - Continuous Drain (Id) @ 25°C: 110A Tc
- Power Dissipation-Max: 960W Tc
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
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