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- Manufacturer No：IXTH22N50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH22N50P
- SKU：3896212
- Description：MOSFET N-CH 500V 22A TO-247
User Guide
User Guide
IXTH22N50P Details
MOSFET N-CH 500V 22A TO-247
IXTH22N50P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 22A
- Factory Lead Time: 28 Weeks
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- Rise Time: 27 ns
- Power Dissipation: 350W
- Vgs(th) (Max) @ Id: 5.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 22A Tc
- Avalanche Energy Rating (Eas): 750 mJ
- Rds On (Max) @ Id, Vgs: 270m Ω @ 11A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Published: 2006
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 50A
- Case Connection: DRAIN
- Vgs (Max): ±30V
- Turn-Off Delay Time: 75 ns
- Fall Time (Typ): 21 ns
- JEDEC-95 Code: TO-247AD
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Drain-source On Resistance-Max: 0.27Ohm
- Series: PolarHV?
- Power Dissipation-Max: 350W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
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