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- Manufacturer No：IXTQ36N50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTQ36N50P
- SKU：3896819
- Description：MOSFET N-CH 500V 36A TO-3P
User Guide
User Guide
IXTQ36N50P Details
MOSFET N-CH 500V 36A TO-3P
IXTQ36N50P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Factory Lead Time: 5 Weeks
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Case Connection: DRAIN
- Turn-Off Delay Time: 75 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Continuous Drain Current (ID): 36A
- Resistance: 170mOhm
- Power Dissipation: 540W
- Avalanche Energy Rating (Eas): 1500 mJ
- Current - Continuous Drain (Id) @ 25°C: 36A Tc
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2006
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±30V
- Additional Feature: AVALANCHE RATED
- Current Rating: 36A
- Fall Time (Typ): 21 ns
- Package / Case: TO-3P-3, SC-65-3
- Rise Time: 27ns
- Pulsed Drain Current-Max (IDM): 108A
- Series: PolarHV?
- Power Dissipation-Max: 540W Tc
- Rds On (Max) @ Id, Vgs: 170m Ω @ 500mA, 10V
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