IPB054N06N3GATMA1Infineon
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    Inventory:2338
    • Qty Unit Price price
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    • 10 $2619.027 $26190.27
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    • 1000 $2567.421 $2567421
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    IPB054N06N3GATMA1
    • Manufacturer No：
      IPB054N06N3GATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB054N06N3GATMA1
    • SKU：
      2664878
    • Description：
      N-Channel 60 V 80A (Tc) 115W (Tc) Surface Mount D?PAK (TO-263AB)

    User Guide

    User Guide

    IPB054N06N3GATMA1 Details

    N-Channel 60 V 80A (Tc) 115W (Tc) Surface Mount D?PAK (TO-263AB)

    IPB054N06N3GATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Pbfree Code: no
    • Qualification Status: Not Qualified
    • Max Dual Supply Voltage: 60V
    • Reach Compliance Code: not_compliant
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Fall Time (Typ): 9 ns
    • Turn On Delay Time: 24 ns
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Power Dissipation: 115W
    • Power Dissipation-Max: 115W Tc
    • Drain-source On Resistance-Max: 0.0057Ohm
    • Vgs(th) (Max) @ Id: 4V @ 58μA
    • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 30V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Lead Free: Contains Lead
    • Terminal Form: GULL WING
    • Factory Lead Time: 13 Weeks
    • Published: 2008
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Halogen Free: Halogen Free
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 80A
    • Series: OptiMOS?
    • Turn-Off Delay Time: 32 ns
    • Current - Continuous Drain (Id) @ 25°C: 80A Tc
    • Rise Time: 68 ns
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Avalanche Energy Rating (Eas): 77 mJ
    • Rds On (Max) @ Id, Vgs: 5.4m Ω @ 80A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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