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- Manufacturer No：IRF3706PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF3706PBF
- SKU：2688633
- Description：MOSFET N-CH 20V 77A TO-220AB
User Guide
User Guide
IRF3706PBF Details
MOSFET N-CH 20V 77A TO-220AB
IRF3706PBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- Dual Supply Voltage: 20V
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Series: HEXFET?
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Nominal Vgs: 2 V
- Power Dissipation: 88W
- Continuous Drain Current (ID): 77A
- Drain to Source Resistance: 10.5mOhm
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 77A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
- Mounting Type: Through Hole
- Termination: Through Hole
- RoHS Status: RoHS Compliant
- Min Operating Temperature: -55°C
- Packaging: Tube
- REACH SVHC: No SVHC
- Max Operating Temperature: 175°C
- Voltage - Rated DC: 20V
- Drain to Source Breakdown Voltage: 20V
- Threshold Voltage: 2V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Supplier Device Package: TO-220AB
- Turn-Off Delay Time: 17 ns
- Vgs (Max): ±12V
- Fall Time (Typ): 4.8 ns
- Resistance: 8.5mOhm
- Current Rating: 77A
- Power Dissipation-Max: 88W Tc
- Drive Voltage (Max Rds On,Min Rds On): 2.8V 10V
- Rise Time: 87ns
- Rds On Max: 8.5 mΩ
- Input Capacitance: 2.41nF
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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