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IRF7451PBF123
  • Manufacturer No:
    IRF7451PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2695265
  • Description:
    INFINEON IRF7451PBF MOSFET Transistor, N Channel, 3.6 A, 150 V, 90 mohm, 10 V, 5.5 V
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IRF7451PBF
  • Manufacturer No:
    IRF7451PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7451PBF
  • SKU:
    2695265
  • Description:
    INFINEON IRF7451PBF MOSFET Transistor, N Channel, 3.6 A, 150 V, 90 mohm, 10 V, 5.5 V

IRF7451PBF Details

INFINEON IRF7451PBF MOSFET Transistor, N Channel, 3.6 A, 150 V, 90 mohm, 10 V, 5.5 V

IRF7451PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 150V
  • Max Operating Temperature: 150°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Published: 2004
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Turn On Delay Time: 10 ns
  • Fall Time (Typ): 15 ns
  • Width: 3.9878mm
  • Series: HEXFET?
  • Continuous Drain Current (ID): 3.6A
  • Pulsed Drain Current-Max (IDM): 29A
  • Length: 4.9784mm
  • Drain-source On Resistance-Max: 0.09Ohm
  • Nominal Vgs: 5.5 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A Ta
  • Rds On (Max) @ Id, Vgs: 90m Ω @ 2.2A, 10V
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Packaging: Tube
  • Termination: SMD/SMT
  • Voltage - Rated DC: 150V
  • Dual Supply Voltage: 150V
  • Threshold Voltage: 5.5V
  • Gate to Source Voltage (Vgs): 30V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Power Dissipation: 2.5W
  • Vgs (Max): ±30V
  • Height: 1.4986mm
  • Current Rating: 3.6A
  • Turn-Off Delay Time: 17 ns
  • Power Dissipation-Max: 2.5W Ta
  • Rise Time: 4.2ns
  • Vgs(th) (Max) @ Id: 5.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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