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- Manufacturer No：MT48LC2M32B2B5-7 IT:G
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT48LC2M32B2B5-7 IT:G
- SKU：3932876
- Description：EAR99 Surface Mount MT48LC2M32B2 Tray ic memory 143MHz 5.5ns 8mm 0.002A
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MT48LC2M32B2B5-7 IT:G Details
EAR99 Surface Mount MT48LC2M32B2 Tray ic memory 143MHz 5.5ns 8mm 0.002A
MT48LC2M32B2B5-7 IT:G Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Supply Voltage: 3.3V
- Packaging: Tray
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2008
- Operating Temperature: -40°C~85°C TA
- Supply Voltage-Max (Vsup): 3.6V
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Width: 8mm
- Voltage - Supply: 3V~3.6V
- Pin Count: 90
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Refresh Cycles: 4096
- Technology: SDRAM
- Interleaved Burst Length: 1248
- Clock Frequency: 143MHz
- Access Time: 5.5ns
- Write Cycle Time - Word, Page: 14ns
- Memory Size: 64Mb 2M x 32
- Organization: 2MX32
- Base Part Number: MT48LC2M32B2
- Mounting Type: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Power Supplies: 3.3V
- Qualification Status: Not Qualified
- Supply Voltage-Min (Vsup): 3V
- Memory Width: 32
- Height Seated (Max): 1mm
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Number of Terminations: 90
- Length: 13mm
- I/O Type: COMMON
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Standby Current-Max: 0.002A
- Sequential Burst Length: 1248FP
- Memory Density: 67108864 bit
- HTS Code: 8542.32.00.02
- Package / Case: 90-VFBGA
- JESD-30 Code: R-PBGA-B90
- Supply Current-Max: 0.225mA
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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