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- Manufacturer No：PHT6NQ10T,135
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PHT6NQ10T,135
- SKU：3947662
- Description：MOSFET TAPE13 PWR-MOS
User Guide
User Guide
PHT6NQ10T,135 Details
MOSFET TAPE13 PWR-MOS
PHT6NQ10T,135 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Lead Free: Lead Free
- Number of Pins: 4
- Pin Count: 4
- Continuous Drain Current (ID): 3A
- Peak Reflow Temperature (Cel): 260
- Max Dual Supply Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Height: 1.7mm
- Rise Time: 15 ns
- Length: 6.7mm
- Turn On Delay Time: 6 ns
- Power Dissipation: 1.8W
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Drain-source On Resistance-Max: 0.09Ohm
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 4
- Drain Current-Max (Abs) (ID): 3A
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 100V
- Factory Lead Time: 4 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Published: 1999
- Operating Temperature: -65°C~150°C TJ
- Case Connection: DRAIN
- Fall Time (Typ): 15 ns
- Turn-Off Delay Time: 20 ns
- Width: 3.7mm
- Package / Case: TO-261-4, TO-261AA
- Pulsed Drain Current-Max (IDM): 26A
- Series: TrenchMOS?
- Current - Continuous Drain (Id) @ 25°C: 3A Ta
- Rds On (Max) @ Id, Vgs: 90m Ω @ 3A, 10V
- Power Dissipation-Max: 1.8W Ta 8.3W Tc
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